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HAF1004(L), HAF1004(S)Silicon P Channel MOS FET SeriesPower SwitchingADE-208-629B (Z)3rd. EditionMay 2002DescriptionThis FET has the over temperature shutdown capability sensing to the junction temperature. This FET hasthe builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdownthe gate voltage in case of high junction temperature like applying over power consumption, over currentetc.Features Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Builtin the over temperature shutdown circuit Latch type shutdown operation (Need 0 voltage recovery)OutlineDPAK-2D2, 4441G Gate resistor12Tempe- Latch Gate 3rature circuit shut-scncing downcircuit circuit1. Gate2. Drain123. Source334. DrainSHA
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