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View 2n3196 detailed specification:

isc Silicon PNP Power Transistor 2N3196 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current-Continuous -5 A C P Collector Power Dissipation@T =25 75 W C C Operating and Storage Junction -65 +200 T T J, stg Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.17 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2N319... See More ⇒

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