View 2sa1093 detailed specification:
isc Silicon PNP Power Transistor 2SA1093 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Good Linearity of h FE Complement to Type 2SC2563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 50W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -8 A C I Base Current-Continuous -0.8 A B Collector Power Dissipation P 80 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1093 ELECTRICA... See More ⇒
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2sa1093.pdf Design, MOSFET, Power
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