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View 2sa1837 detailed specification:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SC4793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -230 V CBO V Collector-Emitter Voltage -230 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -1 A C I Base Current-Continuous -0.1 A B Collector Power Dissipation 2 @T =25 a P W C Collector Power Dissipation 20 @T =25 C Junction Temperature 150 T J T Storage Temperature -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark ... See More ⇒

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