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View 2sa490 detailed specification:

isc Silicon PNP Power Transistor 2SA490 DESCRIPTION High Collector Current I = -3A C Collector-Emitter Breakdown Voltage V = -40V(Min) (BR)CEO Complement to Type 2SC790 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 10 Watts output applications Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -3 A C I Emitter Current-Continuous 3 A E Total Power Dissipation P 25 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA490 ELECTRICAL CHARACTERISTICS T =25 unles... See More ⇒

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