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View 2sd310 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD310 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current-Continuous 15 A C I Base Current-Continuous 6 A B Collector Power Dissipation P 150 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD310 ELECTRICAL CHARACTERISTICS T =25 ... See More ⇒

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