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View 2sd314 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD314 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB508 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 3.0 A C I Collector Current-Peak 8.0 A CM Collector Power Dissipation 1.75 @ T =25 a P W C Collector Power Dissipation 30 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -40 150 stg THERMAL CHARACTERISTICS SYMBOL P... See More ⇒

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