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View bu508a-m detailed specification:

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V (Min) High Power Dissipation- PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current- Continuous 5 A C I Collector Current-Peak 16 A CM I Base Current- Continuous 4 A B IBM Base Current-Peak 6 A Collector Power Dissipation PC 100 W @ T =25 C T Junction Temperature 150 J Tstg Storage Temperature Range -65 150 SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 /W 1 isc website www.iscsemi.cn isc & iscse... See More ⇒

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