View bu508a-m datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Power Dissipation- : PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BEV Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBOI Collector Current- Continuous 5 A CI Collector Current-Peak 16 A CMI Base Current- Continuous 4 A BIBM Base Current-Peak 6 A Collector Power Dissipation PC 100 W @ T =25 CT Junction Temperature 150 JTstg Storage Temperature Range -65~150 SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 /W 1 isc websitewww.iscsemi.cn isc & iscse

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