All Transistors. Equivalents Search

 

View bu508d detailed specification:

bu508dbu508d

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION With TO-3PN package High voltage Built-in damper diode APPLICATIONS For use in large screen colour deflection circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 5 A ICM Collector current (Pulse) 8 A IB Base current 2.5 A PC Collector power dissipation TC=25 125 W Tj Junction temperature 150 Tstg Storage temperature -65-150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resista... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 bu508d.pdf Design, MOSFET, Power

 bu508d.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bu508d.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.