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View fcp067n65s3 detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP067N65S3 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages UPS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous@Tc=25 44 I A D 28 Tc=100 I Drain Current-Single Pulsed 110 A DM P Total Dissipation 312 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.4 /W Rth(ch-a) Channel-to-ambient thermal resist... See More ⇒

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