All Transistors. Equivalents Search

View fcpf11n60nt detailed specification:

isc N-Channel MOSFET Transistor FCPF11N60NT FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous;@Tc=25 10.8 I A D 6.8 Tc=100 I Drain Current-Single Pulsed 32.4 A DM P Total Dissipation 32.1 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 3.9 1 isc website www.iscsemi.cn isc & iscsemi is registered tradema... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fcpf11n60nt.pdf Design, MOSFET, Power

 fcpf11n60nt.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fcpf11n60nt.pdf Database, Innovation, IC, Electricity