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View irf1407l detailed specification:

isc N-Channel MOSFET Transistor IRF1407L FEATURES Static drain-source on-resistance RDS(on) 7.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-Source Voltage 20 V GSS Drain Current-ContinuousTc=25 100 I A D 70 Tc=100 I Drain Current-Single Pulsed 520 A DM P Total Dissipation @T =25 200 W D C T Max. Operating Junction Temperature 175 ch Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.75 1 isc website www.iscsemi.cn isc & iscsemi is registered tradem... See More ⇒

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