View irf1407s detailed specification:

irf1407sirf1407s

Isc N-Channel MOSFET Transistor IRF1407S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-Source Voltage 20 V GSS Drain Current-ContinuousTc=25 100 I A D 70 Tc=100 I Drain Current-Single Pulsed 520 A DM P Total Dissipation @T =25 200 W D C T Max. Operating Junction Temperature 175 ch Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.75 /W Rth(ch-a) Channel-to-ambient thermal resistance 40 1 isc website www.iscsemi.cn isc & iscs... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irf1407s.pdf Design, MOSFET, Power

 irf1407s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1407s.pdf Database, Innovation, IC, Electricity