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View irf2804 detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF2804 IIRF2804 FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 75 A D I Drain Current-Single Pulsed 1080 A DM P Total Dissipation @T =25 300 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.50 Channel-to-ambient thermal resistance /W Rth(ch-a) 62... See More ⇒

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