View irf2804 datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2804IIRF2804FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 75 ADI Drain Current-Single Pulsed 1080 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.50Channel-to-ambient thermal resistance/WRth(ch-a) 62

Keywords - ALL TRANSISTORS DATASHEET

 irf2804.pdf Design, MOSFET, Power

 irf2804.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf2804.pdf Database, Innovation, IC, Electricity