All Transistors. Equivalents Search

View irf3205 detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205 IIRF3205 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 110 A D I Drain Current-Single Pulsed 390 A DM P Total Dissipation @T =25 200 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.75 Channel-to-ambient thermal resistance /W Rth(ch-a) 62... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irf3205.pdf Design, MOSFET, Power

 irf3205.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3205.pdf Database, Innovation, IC, Electricity