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View irf3205 datasheet:

irf3205irf3205

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205IIRF3205FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 110 ADI Drain Current-Single Pulsed 390 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.75Channel-to-ambient thermal resistance/WRth(ch-a) 62

 

Keywords - ALL TRANSISTORS DATASHEET

 irf3205.pdf Design, MOSFET, Power

 irf3205.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3205.pdf Database, Innovation, IC, Electricity

 

 
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