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View irf3205strlpbf detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205STRLPBF DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 55 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ T =25 110 A D C I Pulse Drain Current 390 A DM P Total Dissipation@T =25 200 W tot C T Max. Operating Junction Temperature 175 j T Storage Temperature Range -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.75 th j-c 1 isc website www.iscsemi.com is... See More ⇒

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