All Transistors. Equivalents Search

 

View irf3610s detailed specification:

irf3610sirf3610s

Isc N-Channel MOSFET Transistor IRF3610S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GSS Drain Current-ContinuousTc=25 103 I A D 73 Tc=100 I Drain Current-Single Pulsed 410 A DM P Total Dissipation @T =25 333 W D C T Max. Operating Junction Temperature 175 ch Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.5 /W Rth(ch-a) Channel-to-ambient thermal resistance 40 1 isc website www.iscsemi.cn isc & iscs... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 irf3610s.pdf Design, MOSFET, Power

 irf3610s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3610s.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.