All Transistors. Equivalents Search

View irf520fi detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520FI FEATURES Typical R =0.23 DS(on) Avalanche Rugged Technology High Current Capability Low Gate Charge 175 Operating Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Current ,High Speed Switching DC-DC&DC-AC Converters Motor Control ,Audio Amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 7 A D I Drain Current-Single Plused 40 A DM P Total Dissipation @T =25 35 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -65 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 4.29 th j-c /W R Th... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irf520fi.pdf Design, MOSFET, Power

 irf520fi.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf520fi.pdf Database, Innovation, IC, Electricity