View irf520n datasheet:

isc N-Channel MOSFET Transistor IRF520N IIRF520N FEATURES Static drain-source on-resistance RDS(on) 0.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 16 V GS I Drain Current-Continuous 9.7 A D I Drain Current-Single Pulsed 38 A DM P Total Dissipation @T =25 48 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 3.1 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc websi... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 irf520n.pdf Design, MOSFET, Power

 irf520n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf520n.pdf Database, Innovation, IC, Electricity