All Transistors. Datasheet

 

View irf520n datasheet:

irf520nirf520n

isc N-Channel MOSFET Transistor IRF520NIIRF520NFEATURESStatic drain-source on-resistance:RDS(on) 0.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 16 VGSI Drain Current-Continuous 9.7 ADI Drain Current-Single Pulsed 38 ADMP Total Dissipation @T =25 48 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 3.1Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websi

 

Keywords - ALL TRANSISTORS DATASHEET

 irf520n.pdf Design, MOSFET, Power

 irf520n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf520n.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.