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MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON) 0.4 ;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 9 A Ptot Total Dissipation@TC=25 74 W Tj Max. Operating Junction temperature 150 Tstg Storage temperature -65 150 TO-220 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA 200 V VGS(TH) Gate threshold voltage VDS= VGS; ID=1mA 2 4 V RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.4A 400 m 100 IGSS Gate source leakage current VGS= 20V;VDS=0 nA IDSS Zero gate voltage d... See More ⇒

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