View irf630 datasheet:

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 9 APtot Total Dissipation@TC=25 74 WTj Max. Operating Junction temperature 150 Tstg Storage temperature -65~150 TO-220 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN MAX UNITV(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA 200 VVGS(TH) Gate threshold voltage VDS= VGS; ID=1mA 2 4 VRDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.4A 400 m 100IGSS Gate source leakage current VGS=20V;VDS=0 nA IDSS Zero gate voltage d

Keywords - ALL TRANSISTORS DATASHEET

 irf630.pdf Design, MOSFET, Power

 irf630.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf630.pdf Database, Innovation, IC, Electricity