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View irf630a detailed specification:

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.4 (Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor con- trols, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage 30 V ID Drain Current-continuous@ TC=25 9 A Ptot Total Dissipation@TC=25 72 W Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature Range -55 150 THER... See More ⇒

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