View irf630a datasheet:

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor con- trols, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNITARAMETER VDSS Drain-Source Voltage (VGS=0) 200 VVGS Gate-Source Voltage 30 V ID Drain Current-continuous@ TC=25 9 APtot Total Dissipation@TC=25 72 WTj Max. Operating Junction Temperature 150 Tstg Storage Temperature Range -55~150 THER

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