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View irf640nl detailed specification:

Isc N-Channel MOSFET Transistor IRF640NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 18 A D P Total Dissipation @T =25 150 W D C T Max. Operating Junction Temperature -55 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(j-c) Channel-to-case thermal resistance 1 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRF640NL ELECTRICAL CHARAC... See More ⇒

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