View irf840a detailed specification:
isc N-Channel Mosfet Transistor IRF840A FEATURES Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 30 V GS I Drain Current-continuous@ TC=25 8 A D I Drain Current-Single Plused 32 A DM P Total Dissipation@TC=25 125 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 1.0 th j-c /W R Thermal Resistance,Junction t... See More ⇒
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irf840a.pdf Design, MOSFET, Power
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