View irf840a datasheet:

isc N-Channel Mosfet Transistor IRF840AFEATURESDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GSV Gate-Source Voltage 30 VGSI Drain Current-continuous@ TC=25 8 ADI Drain Current-Single Plused 32 ADMP Total Dissipation@TC=25 125 WtotT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 1.0th j-c/WR Thermal Resistance,Junction t

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