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View irf9530 detailed specification:

INCHANGE Semiconductor isc P-Channel Mosfet Transistor IRF9530 FEATURES -12A -100V Single pulse avalanche energy rated Static Drain-Source On-Resistance R =0.3 (Max) DS(on) SOA is power dissipation limited Nanosecond switching speeds Linear transfer characteristics Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION The power MOSFET is designed for applications such as switching regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) -100 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=25 -12 A D I Drain Current-Single Plused -48 A DM P Total Dissipation@TC=25 75 W t... See More ⇒

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