View irf9530 datasheet:

INCHANGE Semiconductorisc P-Channel Mosfet Transistor IRF9530FEATURES-12A-100VSingle pulse avalanche energy ratedStatic Drain-Source On-Resistance: R =0.3(Max)DS(on)SOA is power dissipation limitedNanosecond switching speedsLinear transfer characteristicsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONThe power MOSFET is designed for applications such asswitching regulators,switching convertors,motor drivers,relaydrivers and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive powerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) -100 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 -12 ADI Drain Current-Single Plused -48 ADMP Total Dissipation@TC=25 75 Wt

Keywords - ALL TRANSISTORS DATASHEET

 irf9530.pdf Design, MOSFET, Power

 irf9530.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf9530.pdf Database, Innovation, IC, Electricity