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View irfb33n15d detailed specification:

isc N-Channel MOSFET Transistor IRFB33N15D,IIRFB33N15D FEATURES Static drain-source on-resistance RDS(on) 56m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 33 A D I Drain Current-Single Pulsed 130 A DM P Total Dissipation @T =25 170 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.9 /W Rth(ch-a) Channel-to-ambient thermal resistance 62 1 isc website www.iscsemi.cn isc & iscsemi is ... See More ⇒

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