View irfb33n15d datasheet:

isc N-Channel MOSFET Transistor IRFB33N15D,IIRFB33N15DFEATURESStatic drain-source on-resistance:RDS(on) 56mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 33 ADI Drain Current-Single Pulsed 130 ADMP Total Dissipation @T =25 170 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.9/WRth(ch-a) Channel-to-ambient thermal resistance 621isc websitewww.iscsemi.cn isc & iscsemi is

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