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View mje13005d detailed specification:

Isc Silicon NPN Power Transistor MJE13005D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current-Continuous 4 A C Collector Power Dissipation P 65 W C @T =25 C T Junction Temperature 150 j T Storage Temperature -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE13005D ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MI... See More ⇒

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