View mje13005d datasheet:

Isc Silicon NPN Power Transistor MJE13005DDESCRIPTIONHigh Voltage CapabilityHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFluorescent lampElectronic ballastElectronic transformerSwitch mode power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 700 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 4 ACCollector Power DissipationP 65 WC@T =25CT Junction Temperature 150 jT Storage Temperature -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor MJE13005DELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MI

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