View mje13009 detailed specification:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 12 A ICM Collector current-Peak 24 A IE Emitter current 18 A IEM Emitter current-Peak 36 A IB Base current 6 A IBM Base current-Peak 12 A Ta=25 2 PD Total power dissipation W TC=25 100 Tj... See More ⇒
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mje13009.pdf Design, MOSFET, Power
mje13009.pdf RoHS Compliant, Service, Triacs, Semiconductor
mje13009.pdf Database, Innovation, IC, Electricity
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