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View tip127b detailed specification:

isc Silicon PNP Darlington Power Transistor TIP127B DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -5 A C I Collector Current-Peak -8 A CM I Base Current-DC -120 mA B Collector Power Dissipation 65 T =25 C P W C Collector Power Dissipation 2 T =25 a T... See More ⇒

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