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BFP840FESD SiGe C NPN RF bipolar transistor Product description The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to enable best in class noise performance at high frequencies NFmin = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA High gain Gms = 23 dB at 5.5 GHz, 1.8 V, 10 mA OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications WLAN, WiMAX and UWB Satel... See More ⇒

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