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BFP840FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to enable best in class noise performance at high frequencies:NFmin = 0.75 dB at 5.5 GHz, 1.8 V, 5 mA High gain Gms = 23 dB at 5.5 GHz, 1.8 V, 10 mA OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a correspondingcollector resistor)Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.Potential applications WLAN, WiMAX and UWB Satel

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