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View ipd70n03s4l-04 ds detailed specification:

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IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04 PG-TO252-3-11 4N03L04 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V 70 A Continuous drain current1) D C GS T =100 C, C 70 V =10 V2) GS I T =25 C 280 Pulsed drain current2) D,pulse C E I =70 A Avalanche energy, single pulse 57 mJ AS D I T =25 C Avalanche current, single pulse 70 A AS C V Gate source voltage 16 V GS P T =25 C Power dissipation 68 W tot C T , T Operating and storage tem... See More ⇒

 

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 ipd70n03s4l-04 ds.pdf Design, MOSFET, Power

 ipd70n03s4l-04 ds.pdf RoHS Compliant, Service, Triacs, Semiconductor

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