View ipd70n03s4l-04 ds datasheet:

IPD70N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 4.3mDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD70N03S4L-04 PG-TO252-3-11 4N03L04Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 C, V =10 V70 AContinuous drain current1) D C GST =100 C, C70V =10 V2)GSI T =25 C280Pulsed drain current2) D,pulse CE I =70 AAvalanche energy, single pulse 57 mJAS DI T =25 CAvalanche current, single pulse 70 AAS CVGate source voltage 16 VGSP T =25 CPower dissipation 68 Wtot CT , TOperating and storage tem

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 ipd70n03s4l-04 ds.pdf Design, MOSFET, Power

 ipd70n03s4l-04 ds.pdf RoHS Compliant, Service, Triacs, Semiconductor

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