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IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM) DS(on) ID 80 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package PG-TO220-3 PG-TO262-3 PG-TO263-3 PG-TO252-3 Marking 086N10N 086N10N 083N10N 082N10N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 C2) 80 A D C T =100 C 58 C I T =25 C 320 Pulse... See More ⇒

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 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf Design, MOSFET, Power

 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

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