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View irf1405zlpbf irf1405zpbf irf1405zspbf detailed specification:

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB D2Pak TO-262 applications. IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 150 Continuous Drain Current, VGS @ 10V (Silico... See More ⇒

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