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View irf3610spbf detailed specification:

IRF3610SPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11.6m l Hard Switched and High Frequency Circuits ID S 103A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche D SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S G D2Pak IRF3610SPbF GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 103 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 73 A IDM Pulsed Drain Current 410 PD @TC = 25 C W Maximum Power Dissipation 333 Linear Derating Factor 2.2 W/ C VGS V Gate-to-Source Voltage 20 dv/dt Peak Diode Recovery 23 V/ns TJ Operating Junct... See More ⇒

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