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View irf6215pbf detailed specification:

PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its w... See More ⇒

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