View irf640nlpbf irf640npbf irf640nspbf detailed specification:

irf640nlpbf_irf640npbf_irf640nspbfirf640nlpbf_irf640npbf_irf640nspbf

PD - 95046A IRF640NPbF IRF640NSPbF l Advanced Process Technology IRF640NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.15 G l Lead-Free Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low ... See More ⇒

 

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 irf640nlpbf irf640npbf irf640nspbf.pdf Design, MOSFET, Power

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