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View irf8010 detailed specification:

PD - 94497 SMPS MOSFET IRF8010 Applications HEXFET Power MOSFET High frequency DC-DC converters UPS and Motor Control VDSS RDS(on) max ID Benefits 100V 15m 80A Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Typical RDS(on) = 12m TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 80 Continuous Drain Current, VGS @ 10V ID @ TC = 100 C 57 A Pulsed Drain Current IDM 320 PD @TC = 25 C Power Dissipation 260 W Linear Derating Factor 1.8 W/ C VGS Gate-to-Source Voltage 20 V dv/dt Peak Diode Recovery dv/dt 16 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1... See More ⇒

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