View irf8010 datasheet:

PD - 94497SMPS MOSFETIRF8010ApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlVDSS RDS(on) max IDBenefits100V 15m 80A Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current Typical RDS(on) = 12mTO-220ABAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 80 Continuous Drain Current, VGS @ 10VID @ TC = 100C 57 APulsed Drain Current IDM 320PD @TC = 25C Power Dissipation 260 WLinear Derating Factor 1.8 W/CVGS Gate-to-Source Voltage 20 Vdv/dt Peak Diode Recovery dv/dt 16 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range CSoldering Temperature, for 10 seconds 300 (1

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