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View irfb3077gpbf detailed specification:

PD - 96200 IRFB3077GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m l Hard Switched and High Frequency Circuits max. 3.3m Benefits G l Worldwide Best RDS(on) in TO-220 ID (Silicon Limited) 210A l Improved Gate, Avalanche and Dynamic dV/dt ID (Package Limited) 120A Ruggedness S l Fully Characterized Capacitance and Avalanche SOA D l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free S D G TO-220AB IRFB3077GPbF GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 210 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150 A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire B... See More ⇒

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